How does the IGBT (ideal, switching) component calculate switching and conduction losses from the loss map, and how is power dissipation computed at the thermal port?

How does the IGBT (ideal, switching) component calculate switching and conduction losses from the loss map, and how is power dissipation computed at the thermal port?

1.Loss Calculation from Loss Map:

• The loss map is a function of collector current (Ic) and junction temperature (Tj).
• When the device is OFF, Ic = 0. If I assume no conduction in the OFF state, how does the component calculate E_loss from the map in this case?

2.Thermal Model / Thermal Port:

• How is the power dissipated by the component computed?
• Is it based on instantaneous power (Vce × Ic)?
• Or is it derived by differentiating E_loss from the loss map and summing it with conduction power?

Answer 1

[Sabin]

Switching losses depend on the off-state voltage and the on-state current. When a switching device turns on, the power losses depend on the initial off-state voltage across the device and the final on-state current when the device is in its fully on state. Similarly, when a switching device turns off, the power losses depend on the initial on-state current through the device and the final off-state voltage across the device in the fully off state.

The power dissipated is xomputed using instantaneous power, v*i.