This example shows generation of the characteristic curves for an N-channel MOSFET. Define the vector of gate voltages and minimum and maximum drain-source voltages by double clicking on the block labeled 'Define Conditions (Vg and Vds)'. Then click on hyperlink
plot results in the model.
This type of plot can be compared against a manufacturer datasheet to confirm a correct implementation of the MOSFET parameters. You can also use this model to examine the MOSFET characteristics in the reverse region by specifying a range of negative Vds values.
To explore the properties of a P-channel MOSFET, copy a P-Channel MOSFET from the library to replace the N-channel device, taking care to swap over the two output connections so that the source is still connected to ground. To specify normal operation, the vector of gate voltages should be negative, and the Vds range of values should be negative.
Simulation Results from Simscape Logging
The plot below shows drain current vs. drain-source voltage for a range of gate voltages.
Results from Real-Time Simulation
This example has been tested on a Speedgoat Performance real-time target machine with an Intel® 3.5 GHz i7 multi-core CPU. This model can run in real time with a step size of 30 microseconds.